✔ Avalanche Breakdown In Zener Diode

Avalanche Breakdown In Zener Diode

- April 07, 2018

These diodes can indefinitely sustain a moderate level of current during breakdown. As we increase the reverse voltage applied to the zener diode these minority carriers tend to accelerated.

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Avalanche diodes commonly encountered as high voltage zener diodes are constructed to break down at a uniform voltage and to avoid current crowding during breakdown.

Avalanche breakdown in zener diode. The temperature coefficient of the zener is negative whereas the avalanche is positive. The avalanche breakdown is observed in the zener diodes having v z having than 8 v. The voltage at which the breakdown occurs is called the breakdown voltage.

Both refer to breakdown of a diode under reverse bias. The temperature coefficient of zener and avalanche breakdown is different. The zener breakdown voltage varies inversely with the temperature while avalanche breakdown voltage varies directly with the temperature.

The avalanche breakdown and zener breakdown are two different mechanisms by which a pn junction breaks. Specifically when a diode is reverse biased very little current flows and the diode is to a first order approximation an open circuit. The zener and avalanche breakdown both occur in diode under reverse bias.

The breakdown voltage vz of the zener is inversely proportional to temperature ranges from 5v to 8v. In the reverse biased condition the conduction will take place only due to the minority carriers. Zener breakdown occurs in the diodes which are heavily doped while avalanche breakdown occurs in the diode which is lightly doped.

The ionization of the zener is due to electric field whereas the avalanche is the collision. The avalanche breakdown occurs because of the ionisation of electrons and hole pairs whereas the zener diode occurs because of heavy doping. Zener diode and avalanche diode are terms often used interchangeably with the former much more common.